图书介绍

SOLID-STATE PHYSICS【2025|PDF下载-Epub版本|mobi电子书|kindle百度云盘下载】

SOLID-STATE PHYSICS
  • 著
  • 出版社： SPRINGER-VERLAG
  • ISBN：354007774X
  • 出版时间：1976
  • 标注页数：279页
  • 文件大小：48MB
  • 文件页数：287页
  • 主题词：

PDF下载


点此进入-本书在线PDF格式电子书下载【推荐-云解压-方便快捷】直接下载PDF格式图书。移动端-PC端通用
种子下载[BT下载速度快]温馨提示：（请使用BT下载软件FDM进行下载）软件下载地址页直链下载[便捷但速度慢]  [在线试读本书]   [在线获取解压码]
点击复制MD5值：6bee9f694b9322391b5b9695dcc8e897

下载说明

SOLID-STATE PHYSICSPDF格式电子书版下载

下载的文件为RAR压缩包。需要使用解压软件进行解压得到PDF格式图书。

点击复制85GB完整离线版磁力链接到迅雷FDM等BT下载工具进行下载  详情点击-查看共享计划
建议使用BT下载工具Free Download Manager进行下载,简称FDM(免费,没有广告,支持多平台）。本站资源全部打包为BT种子。所以需要使用专业的BT下载软件进行下载。如BitComet qBittorrent uTorrent等BT下载工具。迅雷目前由于本站不是热门资源。不推荐使用！后期资源热门了。安装了迅雷也可以迅雷进行下载！

（文件页数 要大于 标注页数，上中下等多册电子书除外）

注意：本站所有压缩包均有解压码： 点击下载压缩包解压工具

图书目录

The Properties and Applications of the Hg1-xCdx Te Alloy System&By R.Dornhaus and G.Nimtz.With 98Figures1

1. Introduction1

2. The Crystal3

2.1 Basic Properties3

2.2 Phase Diagram and Crystal Growth5

2.3 Imperfections7

2.3.1 Dislocations and Native Point-Defects7

2.3.2 Foreign Atoms9

3. Band Structure10

3.1 Band Structure Calculation11

3.1.1 KKR-Model Calculations12

3.1.2 Pseudopotential Calculations15

3.1.3 Tight Binding Model20

3.2 The Semimetal-Semiconductor-Transition22

3.3 The Band Edge-Characteristics23

3.3.1 The Three Level Model of a Small-Gap Semiconductor23

3.3.2 Statistics27

3.3.3 Comparison Between Theoretical and Experimental Results29

3.3.3.1 The Dependence of the Energy Gap Eo on Composition x，Temperature T and Pressure p29

3.3.3.2 Effective Masses31

3.3.3.3 g-Factor of Conduction Electrons34

3.3.3.4 Higher Interband Energy Gaps35

3.4 Temperature Dependence of the Band Gap40

3.5 Pressure Effects on the Band Structure45

3.6 The Disorder Problem in Pseudo Binary Alloys48

4. Transport Properties54

4.1 Hall Coefficient，Intrinsic Carrier Density54

4.2 Carrier Mobility，Scattering Mechanisms61

4.3 Magnetoresistance65

4.4 Magnetic Quantum Effects69

4.4.1 Shubnikov-de Haas Effect70

4.4.2 Magnetophonon Effect73

4.4.3 Cyclotron Resonance73

4.4.4 Electron-Spin and Combined Resonance76

4.4.5 Spin-Flip Raman Scattering78

4.4.6 Various Other Quantum Effects79

4.5 Hot Carrier Properties80

4.6 Thermoelectric Effects82

4.7 Magnetic Susceptibility84

5.Optical Properties86

5.1 Fundamental Reflectivity and Absorption86

5.1.1 Reflectance and Absorption86

5.1.2 Magnetoreflectance89

5.1.3 Electroreflectance89

5.2 Optical Phonons90

5.3 Free Carrier Absorption and Reflectance94

6.Infrared Devices95

6.1 Recombination Mechanisms and Carrier Lifetime95

6.2 Photoconductivity99

6.3 Photovoltaic Effects101

6.4 Infrared Radiation Sources103

Acknowledgements106

Notes Added in Proof106

List of Important Symbols109

Numerical Values of Important Quantities111

References112

Resonant Raman Scattering in Semiconductors&By W.Richter.With 54 Figures121

1.Introduction121

2.Electric Susceptibility123

2.1 Direct Transitions124

2.2 Indirect Transitions130

2.3 Excitons131

3.Light Scattering133

3.1Scattering Cross Section133

3.2Transition Susceptibility （Raman Tensor）136

3.2.1 Phenomenological Treatment136

3.2.2 Microscopic Theory140

3.3Selection Rules145

4.Experimental Methods150

4.1Apparatus150

4.1.1 Laser152

4.1.2 Monochromators154

4.1.3 Light Detection155

4.2Evaluation of Cross Sections157

4.2.1 The Scattered Power as a Function of the Optical Constants157

4.2.2 The Determination of the Cross Section and Its Frequency Dependence164

5.One-Phonon Deformation Potential Scattering170

5.1Diamond- and Zincblende-Type Semiconductors173

5.1.1 Deformation Potentials177

5.1.2 E0-Gap183

5.1.3 E1-Gap196

5.1.4 E1-Gap Under Uniaxial Stress205

5.2Wurtzite-Type Materials213

5.3VIb-Semiconductors217

5.4Vb-Semimetals221

5.5Mg2X-Compounds （X = Si，Ge，Sn，Pb）224

5.6Other Materials228

6.Infrared-Active LO Phonons228

6.1Frohlich Interaction230

6.2Allowed LO Scattering232

6.3Forbidden LO Scattering233

6.3.1 Forbidden LO Scattering at Fundamental Gaps234

6.3.2 Forbidden LO Scattering at Higher Gaps236

7.Multiphonon Scattering244

7.1Second-Order Raman Scattering245

7.2Microscopic Theory of the Two-Phonon Raman Processes248

7.3 Two-Phonon Deformation Potential Scattering in Diamond-Zincblende-Type Semiconductors250

7.3.1 E0-Gap253

7.3.2 E1-Gap255

7.3.3 Evaluation of Two-Phonon Deformation Potentials258

8.Conclusions262

Acknowledgements264

List of Symbols264

References267

Subject Index273

热门推荐